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| Transistor 2SC3311A Silicon NPN epitaxial planer type For low-frequency amplification Complementary to 2SA1309A 4.00.2 Unit: mm s Features q q s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg (Ta=25C) 2.00.2 Ratings 60 50 7 200 100 300 150 -55 ~ +150 Unit V V V mA mA mW C C 1:Emitter 2:Collector 3:Base 1 2 3 1.27 1.27 2.540.15 EIAJ:SC-72 New S Type Package s Electrical Characteristics Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance (Ta=25C) Symbol ICBO ICEO VCBO VCEO VEBO hFE fT Cob * Conditions VCB = 10V, IE = 0 VCE = 10V, IB = 0 IC = 10A, IE = 0 IC = 2mA, IB = 0 IE = 10A, IC = 0 VCE = 10V, IC = 2mA IC = 100mA, IB = 10mA VCB = 10V, IE = -2mA, f = 200MHz VCB = 10V, IE = 0, f = 1MHz min typ 0.70.1 marking +0.2 0.45-0.1 15.60.5 Optimum for high-density mounting. Allowing supply with the radial taping. 3.00.2 max 0.1 1 Unit A A V V V 60 50 7 160 0.1 150 3.5 460 0.3 VCE(sat) V MHz pF *h FE Rank classification Q 160 ~ 260 R 210 ~ 340 S 290 ~ 460 hFE Rank 1 Transistor PC -- Ta 500 60 Ta=25C 50 2SC3311A IC -- VCE 200 VCE=10V IC -- VBE Collector power dissipation PC (mW) Collector current IC (mA) 40 IB=160A 140A 300 Collector current IC (mA) 400 160 120 25C 80 Ta=75C -25C 30 120A 100A 200 20 80A 60A 100 10 40A 20A 40 0 0 20 40 60 80 100 120 140 160 0 0 2 4 6 8 10 12 0 0 0.4 0.8 1.2 1.6 2.0 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V) VCE(sat) -- IC Collector to emitter saturation voltage VCE(sat) (V) 100 30 10 3 1 0.3 0.1 0.03 0.01 0.1 25C Ta=75C -25C IC/IB=10 600 hFE -- IC 300 VCE=10V VCE=10V f=100MHz Ta=25C fT -- I E Forward current transfer ratio hFE 500 Transition frequency fT (MHz) 100 250 400 Ta=75C 25C 200 300 -25C 150 200 100 100 50 0.3 1 3 10 30 100 0 0.1 0.3 1 3 10 30 0 - 0.1 - 0.3 -1 -3 -10 -30 -100 Collector current IC (mA) Collector current IC (mA) Emitter current IE (mA) Cob -- VCB 10 240 IE=0 f=1MHz Ta=25C NV -- IC VCE=10V Function=FLAT Ta=25C Collector output capacitance Cob (pF) Noise voltage NV (mV) 8 200 160 6 120 Rg=100k 4 80 20k 40 4.7k 2 0 1 3 10 30 100 0 1 30 100 300 1000 Collector to base voltage VCB (V) Collector current IC (A) 2 |
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